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제품/기술

R&D

Micro Bump

Fine Pitch micro bump (Cu/SnAg)
Development status
2017년 1분기, 10um pitch의 Micro bump 개발 완료
Developed device design
Max bump height : 6~10um
Min. bump pitch : 10um
Min. bump width : 6um
Min. bump to bump space : 4um

Thick RDL




10um standard RDL
20um Thick RDL

30um Thick RDL
Development status
20um Thick RDL 개발 완료(2017년 1분기), 30um Thick RDL 개발 완료(2017년 말)
Materials Information
Polymeric Re-passivation : PI
RDL (Redistribution layer) : Electroplated Copper up to 20um
UBM : Electroplated Copper
Ball
Ball drop : SAC105, 305, 405 and LF35
Electroplated : Lead free solder (SnAg1.8%)
Backside coating film : LC2850

Thin Wafer

Wafer thinning → high wafer warp
Less than 100um
Wafer thinning
without any wafer
handling issue
Development status
BSP(Back side Protection)재료로 100um 박형화 Wafer 개발 완료(2017년 말)