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製品/技術

R&D

Micro Bump

Fine Pitch micro bump (Cu/SnAg)
Development status
2017年第一季度, 成功研发仅为10um pitch的微凸块 (Micro bump)
Developed device design
Max bump height : 6~10um
Min. bump pitch : 10um
Min. bump width : 6um
Min. bump to bump space : 4um

Thick RDL




10um standard RDL
20um Thick RDL

30um Thick RDL
Development status
20um Thick RDL 开发完(2017年7月), 30um Thick RDL 开发完 (2017年末)
Materials Information
Polymeric Re-passivation : PI
RDL (Redistribution layer) : Electroplated Copper up to 20um
UBM : Electroplated Copper
Ball
Ball drop : SAC105, 305, 405 and LF35
Electroplated : Lead free solder (SnAg1.8%)
Backside coating film : LC2850

Thin Wafer

Wafer thinning → high wafer warp
Less than 100um
Wafer thinning
without any wafer
handling issue
Development status
用BSP(Back side Protection)材料, 100um Thin Wafer开发完(2017年末)